SI4122DY-T1-GE3

Part NumberSI4122DY-T1-GE3

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4122DY
Standard Package	2500
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	27.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	95nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	4200pF @ 20V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

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AOD4130	Alpha & Omega Semiconductor Inc., N-Channel 60V 6.5A (Ta), 30A (Tc) 2.5W (Ta), 52W (Tc) Surface Mount TO-252, (D-Pak),	View
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IRFI740GPBF	Vishay Siliconix, N-Channel 400V 5.4A (Tc) 40W (Tc) Through Hole TO-220-3,	View
IPN95R1K2P7ATMA1	Infineon Technologies, N-Channel 950V 6A (Tc) 7W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7	View