Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPD068N10N3GATMA1

IPD068N10N3GATMA1

IPD068N10N3GATMA1

Part NumberIPD068N10N3GATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 90A

DatasheetIPD068N10N3G

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 90A (Tc) 150W (Tc) Surface Mount PG-TO252-3

To learn about the specification of IPD068N10N3GATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD068N10N3GATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD068N10N3GATMA1.
We are offering IPD068N10N3GATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPD068N10N3GATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPD068N10N3G
Standard Package	1
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	6.8mOhm @ 90A, 10V
Vgs(th) (Max) @ Id	3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs	68nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4910pF @ 50V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

IPD068N10N3GATMA1 - Related Products

	IRLZ34NPBF	Infineon Technologies, N-Channel 55V 30A (Tc) 68W (Tc) Through Hole TO-220AB, HEXFET®	View
	IRF7451TRPBF	Infineon Technologies, N-Channel 150V 3.6A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	R6020ANZC8	Rohm Semiconductor, N-Channel 600V 20A (Ta) 120W (Tc) Through Hole TO-3PF,	View
	FDMT800100DC	ON Semiconductor, N-Channel 100V 24A (Ta), 162A (Tc) 3.2W (Ta), 156W (Tc) Surface Mount 8-Dual Cool™88, Dual Cool™, PowerTrench®	View
	SIR846ADP-T1-GE3	Vishay Siliconix, N-Channel 100V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	FCA47N60-F109	ON Semiconductor, N-Channel 600V 47A (Tc) 417W (Tc) Through Hole TO-3PN, SuperFET™	View
	IRLR6225TRPBF	Infineon Technologies, N-Channel 20V 100A (Tc) 63W (Tc) Surface Mount D-Pak, HEXFET®	View
	IPB123N10N3GATMA1	Infineon Technologies, N-Channel 100V 58A (Tc) 94W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	STF15N65M5	STMicroelectronics, N-Channel 650V 11A (Tc) 30W (Tc) Through Hole TO-220FP, MDmesh™ V	View
	RYC002N05T316	Rohm Semiconductor, N-Channel 50V 200mA (Ta) 350mW (Tc) Surface Mount SST3,	View
	SSM3K36FS,LF	Toshiba Semiconductor and Storage, N-Channel 20V 500mA (Ta) 150mW (Ta) Surface Mount SSM, U-MOSIII	View
	SIHP15N60E-GE3	Vishay Siliconix, N-Channel 600V 15A (Tc) 180W (Tc) Through Hole TO-220AB,	View

IPD068N10N3GATMA1 - Tags

IPD068N10N3GATMA1 IPD068N10N3GATMA1 PDF IPD068N10N3GATMA1 datasheet IPD068N10N3GATMA1 specification IPD068N10N3GATMA1 image IPD068N10N3GATMA1 India Renesas Electronics India IPD068N10N3GATMA1 buy IPD068N10N3GATMA1 IPD068N10N3GATMA1 price IPD068N10N3GATMA1 distributor IPD068N10N3GATMA1 supplier IPD068N10N3GATMA1 wholesales