BSP295H6327XTSA1

Part NumberBSP295H6327XTSA1

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BSP295
Standard Package	1
Manufacturer	Infineon Technologies
Series	SIPMOS®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	300mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id	1.8V @ 400µA
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	368pF @ 25V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223-4
Package / Case	TO-261-4, TO-261AA

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