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TN2130K1-G

TN2130K1-G

Part NumberTN2130K1-G

ManufacturerMicrochip Technology

DescriptionMOSFET N-CH 300V 0.085A SOT23-3

DatasheetTN2130

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 300V 85mA (Tj) 360mW (Tc) Surface Mount TO-236AB (SOT23)

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TN2130K1-G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TN2130
Standard Package	1
Manufacturer	Microchip Technology
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25°C	85mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Rds On (Max) @ Id, Vgs	25Ohm @ 120mA, 4.5V
Vgs(th) (Max) @ Id	2.4V @ 1mA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
FET Feature	-
Power Dissipation (Max)	360mW (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236AB (SOT23)
Package / Case	TO-236-3, SC-59, SOT-23-3

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