Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TN2130
Standard Package	1
Manufacturer	Microchip Technology
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25°C	85mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Rds On (Max) @ Id, Vgs	25Ohm @ 120mA, 4.5V
Vgs(th) (Max) @ Id	2.4V @ 1mA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
FET Feature	-
Power Dissipation (Max)	360mW (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236AB (SOT23)
Package / Case	TO-236-3, SC-59, SOT-23-3

IXTA130N15X4	IXYS, N-Channel 150V 130A (Tc) 400W (Tc) Surface Mount TO-263AA,	View
STW30N80K5	STMicroelectronics, N-Channel 800V 24A (Tc) 250W (Tc) Through Hole TO-247-3, MDmesh™ K5	View
CSD18511Q5AT	Texas Instruments, N-Channel 40V 159A (Tc) 104W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
US6U37TR	Rohm Semiconductor, N-Channel 30V 1.5A (Ta) 1W (Ta) Surface Mount TUMT6,	View
IPT60R028G7XTMA1	Infineon Technologies, N-Channel 600V 75A (Tc) 391W (Tc) Surface Mount PG-HSOF-8-2, CoolMOS™ G7	View
SI1416EDH-T1-GE3	Vishay Siliconix, N-Channel 30V 3.9A (Tc) 2.8W (Tc) Surface Mount SOT-363, TrenchFET®	View
R6004ENJTL	Rohm Semiconductor, N-Channel 600V 4A (Tc) 40W (Tc) Surface Mount LPTS (D2PAK),	View
TK25E60X,S1X	Toshiba Semiconductor and Storage, N-Channel 600V 25A (Ta) 180W (Tc) Through Hole TO-220, DTMOSIV-H	View
IXTH240N15X4	IXYS, N-Channel 150V 240A (Tc) 940W (Tc) Through Hole TO-247,	View
R6076ENZ1C9	Rohm Semiconductor, N-Channel 600V 76A (Tc) 120W (Tc) Through Hole TO-247,	View
BSH108,215	Nexperia USA Inc., N-Channel 30V 1.9A (Tc) 830mW (Tc) Surface Mount TO-236AB, TrenchMOS™	View
PSMN4R6-60PS,127	Nexperia USA Inc., N-Channel 60V 100A (Tc) 211W (Tc) Through Hole TO-220AB,	View

TN2130K1-G

Part NumberTN2130K1-G