Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4100DY-T1-GE3

SI4100DY-T1-GE3

SI4100DY-T1-GE3

Part NumberSI4100DY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 6.8A 8-SOIC

DatasheetSI4100DY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 6.8A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SO

To learn about the specification of SI4100DY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4100DY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4100DY-T1-GE3.
We are offering SI4100DY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4100DY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4100DY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	63mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	600pF @ 50V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4100DY-T1-GE3 - Related Products

	IPB026N06NATMA1	Infineon Technologies, N-Channel 60V 25A (Ta), 100A (Tc) 3W (Ta), 136W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	IRL3713STRLPBF	Infineon Technologies, N-Channel 30V 260A (Tc) 330W (Tc) Surface Mount D2PAK, HEXFET®	View
	IPA60R280P6XKSA1	Infineon Technologies, N-Channel 600V 13.8A (Tc) 32W (Tc) Through Hole PG-TO220-FP, CoolMOS™ P6	View
	IPB107N20N3GATMA1	Infineon Technologies, N-Channel 200V 88A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	IRFI530GPBF	Vishay Siliconix, N-Channel 100V 9.7A (Tc) 42W (Tc) Through Hole TO-220-3,	View
	SIRA14DP-T1-GE3	Vishay Siliconix, N-Channel 30V 58A (Tc) 3.6W (Ta), 31.2W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	IRFL210TRPBF	Vishay Siliconix, N-Channel 200V 960mA (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223,	View
	FQD1N60CTM	ON Semiconductor, N-Channel 600V 1A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount D-Pak, QFET®	View
	TSM110NB04LCR RLG	Taiwan Semiconductor Corporation, N-Channel 40V 12A (Ta), 54A (Tc) 3.1W (Ta), 68W (Tc) Surface Mount 8-PDFN (5x6),	View
	STW10N105K5	STMicroelectronics, N-Channel 1050V 6A (Tc) 130W (Tc) Through Hole TO-247, SuperMESH5™	View
	HUF75344G3	ON Semiconductor, N-Channel 55V 75A (Tc) 285W (Tc) Through Hole TO-247-3, UltraFET™	View
	SQD100N04-3M6L_GE3	Vishay Siliconix, N-Channel 40V 100A (Tc) 136W (Tc) Surface Mount TO-252AA,	View

SI4100DY-T1-GE3 - Tags

SI4100DY-T1-GE3 SI4100DY-T1-GE3 PDF SI4100DY-T1-GE3 datasheet SI4100DY-T1-GE3 specification SI4100DY-T1-GE3 image SI4100DY-T1-GE3 India Renesas Electronics India SI4100DY-T1-GE3 buy SI4100DY-T1-GE3 SI4100DY-T1-GE3 price SI4100DY-T1-GE3 distributor SI4100DY-T1-GE3 supplier SI4100DY-T1-GE3 wholesales