2SK2009TE85LF

Part Number2SK2009TE85LF

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 30V 0.2A SMINI

Datasheet2SK2009

Package / CaseTO-236-3, SC-59, SOT-23-3

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Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 200mA (Ta) 200mW (Ta) Surface Mount SC-59-3

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2SK2009TE85LF - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	2SK2009
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V
Rds On (Max) @ Id, Vgs	2Ohm @ 50MA, 2.5V
Vgs(th) (Max) @ Id	1.5V @ 100µA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	70pF @ 3V
FET Feature	-
Power Dissipation (Max)	200mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-59-3
Package / Case	TO-236-3, SC-59, SOT-23-3

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