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IRF630

IRF630

Part NumberIRF630

ManufacturerSTMicroelectronics

DescriptionMOSFET N-CH 200V 9A TO-220

DatasheetIRF630(FP)

Package / CaseTO-220-3

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Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 9A (Tc) 75W (Tc) Through Hole TO-220AB

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IRF630 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRF630(FP)
Standard Package	50
Manufacturer	STMicroelectronics
Series	MESH OVERLAY™ II
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 25V
FET Feature	-
Power Dissipation (Max)	75W (Tc)
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

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