STP110N10F7
STP110N10F7
Part Number STP110N10F7
Description MOSFET N CH 100V 110A TO-220
Package / Case TO-220-3
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Lead Time To be Confirmed
Detailed Description N-Channel 100V 110A (Tc) 150W (Tc) Through Hole TO-220
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STP110N10F7 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STP110N10F7
Standard Package 50
Manufacturer STMicroelectronics
Series DeepGATE™, STripFET™ VII
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 50V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
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