SI3443CDV-T1-GE3
SI3443CDV-T1-GE3
Part Number SI3443CDV-T1-GE3
Description MOSFET P-CH 20V 5.97A 6TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 20V 5.97A (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP
To learn about the specification of SI3443CDV-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI3443CDV-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI3443CDV-T1-GE3.
We are offering SI3443CDV-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI3443CDV-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI3443CDV
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 5.97A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 60mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.4nC @ 5V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 610pF @ 10V
FET Feature -
Power Dissipation (Max) 2W (Ta), 3.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
SI3443CDV-T1-GE3 - Related ProductsMore >>
NTR4101PT1G
ON Semiconductor, P-Channel 20V 1.8A (Ta) 420mW (Ta) Surface Mount SOT-23-3 (TO-236),
View
RRQ045P03TR
Rohm Semiconductor, P-Channel 30V 4.5A (Ta) 600mW (Ta) Surface Mount TSMT6 (SC-95),
View
IXTH76P10T
IXYS, P-Channel 100V 76A (Tc) 298W (Tc) Through Hole TO-247 (IXTH), TrenchP™
View
IRFP9240PBF
Vishay Siliconix, P-Channel 200V 12A (Tc) 150W (Tc) Through Hole TO-247-3,
View
FQP11P06
ON Semiconductor, P-Channel 60V 11.4A (Tc) 53W (Tc) Through Hole TO-220-3, QFET®
View
TSM9435CS RLG
Taiwan Semiconductor Corporation, P-Channel 30V 5.3A (Tc) 5.3W (Tc) Surface Mount 8-SOP,
View
IXTP140P05T
IXYS, P-Channel 50V 140A (Tc) 298W (Tc) Through Hole TO-220AB, TrenchP™
View
BVSS84LT1G
ON Semiconductor, P-Channel 50V 130mA (Ta) 225mW (Ta) Surface Mount SOT-23-3,
View
DMP3098L-7
Diodes Incorporated, P-Channel 30V 3.8A (Ta) 1.08W (Ta) Surface Mount SOT-23-3,
View
RD3L050SNTL1
Rohm Semiconductor, N-Channel 60V 5A (Ta) 15W (Tc) Surface Mount TO-252,
View
SSM6J214FE(TE85L,F
Toshiba Semiconductor and Storage, P-Channel 30V 3.6A (Ta) 500mW (Ta) Surface Mount ES6, U-MOSVI
View
SI2301CDS-T1-E3
Vishay Siliconix, P-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
SI3443CDV-T1-GE3 - Tags