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FQP11P06

FQP11P06

Part NumberFQP11P06

ManufacturerON Semiconductor

DescriptionMOSFET P-CH 60V 11.4A TO-220

DatasheetFQP11P06

Package / CaseTO-220-3

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Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 11.4A (Tc) 53W (Tc) Through Hole TO-220-3

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FQP11P06 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FQP11P06
Standard Package	1000
Manufacturer	ON Semiconductor
Series	QFET®
Packaging	Tube
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	175mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 25V
FET Feature	-
Power Dissipation (Max)	53W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3

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