IXTH76P10T
IXTH76P10T
Part Number IXTH76P10T
Manufacturer IXYS
Description MOSFET P-CH 100V 76A TO-247
Package / Case TO-247-3
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Lead Time To be Confirmed
Detailed Description P-Channel 100V 76A (Tc) 298W (Tc) Through Hole TO-247 (IXTH)
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IXTH76P10T - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXT(A,H,P)76P10T
Standard Package 30
Manufacturer IXYS
Series TrenchP™
Packaging Tube
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 197nC @ 10V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 13700pF @ 25V
FET Feature -
Power Dissipation (Max) 298W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)
Package / Case TO-247-3
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