Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2301CDS-T1-E3

SI2301CDS-T1-E3

SI2301CDS-T1-E3

Part NumberSI2301CDS-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 3.1A SOT23-3

DatasheetSI2301CDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2301CDS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2301CDS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2301CDS-T1-E3.
We are offering SI2301CDS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2301CDS-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2301CDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	112mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	405pF @ 10V
FET Feature	-
Power Dissipation (Max)	860mW (Ta), 1.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2301CDS-T1-E3 - Related Products

	SSM3J378R,LF	Toshiba Semiconductor and Storage, P-Channel 20V 6A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI	View
	SQD40131EL_GE3	Vishay Siliconix, P-Channel 40V 50A (Tc) 62W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®	View
	IRFR9120PBF	Vishay Siliconix, P-Channel 100V 5.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	SQ2351ES-T1_GE3	Vishay Siliconix, P-Channel 20V 3.2A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236), Automotive, AEC-Q101, TrenchFET®	View
	SQ2301ES-T1_GE3	Vishay Siliconix, P-Channel 20V 3.9A (Tc) 3W (Tc) Surface Mount TO-236 (SOT-23), Automotive, AEC-Q101, TrenchFET®	View
	RD3H045SPTL1	Rohm Semiconductor, P-Channel 45V 4.5A (Ta) 15W (Tc) Surface Mount TO-252,	View
	RSD130P10TL	Rohm Semiconductor, P-Channel 100V 13A (Ta) 20W (Ta) Surface Mount CPT3,	View
	RQ1E070RPTR	Rohm Semiconductor, P-Channel 30V 7A (Ta) 550mW (Ta) Surface Mount TSMT8,	View
	RQ6C050BCTCR	Rohm Semiconductor, P-Channel 20V 5A (Tc) 1.25W (Tc) Surface Mount TSMT6 (SC-95),	View
	ZXMP4A57E6TA	Diodes Incorporated, P-Channel 40V 2.9A (Ta) 1.1W (Ta) Surface Mount SOT-26,	View
	SI8499DB-T2-E1	Vishay Siliconix, P-Channel 20V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1), TrenchFET®	View
	IRF9Z34STRRPBF	Vishay Siliconix, P-Channel 60V 18A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D2PAK,	View

SI2301CDS-T1-E3 - Tags

SI2301CDS-T1-E3 SI2301CDS-T1-E3 PDF SI2301CDS-T1-E3 datasheet SI2301CDS-T1-E3 specification SI2301CDS-T1-E3 image SI2301CDS-T1-E3 India Renesas Electronics India SI2301CDS-T1-E3 buy SI2301CDS-T1-E3 SI2301CDS-T1-E3 price SI2301CDS-T1-E3 distributor SI2301CDS-T1-E3 supplier SI2301CDS-T1-E3 wholesales