Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2323CDS-T1-GE3

SI2323CDS-T1-GE3

SI2323CDS-T1-GE3

Part NumberSI2323CDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 6A SOT-23

DatasheetSI2323CDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 6A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2323CDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2323CDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2323CDS-T1-GE3.
We are offering SI2323CDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2323CDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2323CDS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	39mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1090pF @ 10V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 2.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2323CDS-T1-GE3 - Related Products

	FDC602P	ON Semiconductor, P-Channel 20V 5.5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View
	DMP2305U-7	Diodes Incorporated, P-Channel 20V 4.2A (Ta) 1.4W (Ta) Surface Mount SOT-23-3,	View
	RQ5E025ATTCL	Rohm Semiconductor, P-Channel 30V 2.5A (Ta) 1W (Tc) Surface Mount TSMT3,	View
	IRFU9024NPBF	Infineon Technologies, P-Channel 55V 11A (Tc) 38W (Tc) Through Hole IPAK (TO-251), HEXFET®	View
	IXTX32P60P	IXYS, P-Channel 600V 32A (Tc) 890W (Tc) Through Hole PLUS247™-3, PolarP™	View
	IRF9520STRLPBF	Vishay Siliconix, P-Channel 100V 6.8A (Tc) 3.7W (Ta), 60W (Tc) Surface Mount D2PAK,	View
	SBSS84LT1G	ON Semiconductor, P-Channel 50V 130mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236),	View
	DMP1045U-7	Diodes Incorporated, P-Channel 12V 4A (Ta) 800mW (Ta) Surface Mount SOT-23,	View
	SISH625DN-T1-GE3	Vishay Siliconix, P-Channel 30V 17.3A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH, TrenchFET®	View
	SQ7415AEN-T1_GE3	Vishay Siliconix, P-Channel 60V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	SUD19P06-60-E3	Vishay Siliconix, P-Channel 60V 18.3A (Tc) 2.3W (Ta), 38.5W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	DMP3015LSS-13	Diodes Incorporated, P-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SOP,	View

SI2323CDS-T1-GE3 - Tags

SI2323CDS-T1-GE3 SI2323CDS-T1-GE3 PDF SI2323CDS-T1-GE3 datasheet SI2323CDS-T1-GE3 specification SI2323CDS-T1-GE3 image SI2323CDS-T1-GE3 India Renesas Electronics India SI2323CDS-T1-GE3 buy SI2323CDS-T1-GE3 SI2323CDS-T1-GE3 price SI2323CDS-T1-GE3 distributor SI2323CDS-T1-GE3 supplier SI2323CDS-T1-GE3 wholesales