Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SSM3J35CT
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	π-MOSVI
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4V
Rds On (Max) @ Id, Vgs	8Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id	1V @ 1mA
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	12.2pF @ 3V
FET Feature	-
Power Dissipation (Max)	100mW (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	CST3
Package / Case	SC-101, SOT-883

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FDS4435BZ	ON Semiconductor, P-Channel 30V 8.8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
PMZB950UPEYL	Nexperia USA Inc., P-Channel 20V 500mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3,	View

SSM3J35CT,L3F

Part NumberSSM3J35CT,L3F