PMXB350UPEZ
PMXB350UPEZ
Part Number PMXB350UPEZ
Description MOSFET P-CH 20V 1.2A 3DFN
Package / Case 3-XDFN Exposed Pad
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 20V 1.2A (Ta) 360mW (Ta), 5.68W (Tc) Surface Mount DFN1010D-3
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PMXB350UPEZ - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet PMXB350UPE
Standard Package 1
Manufacturer Nexperia USA Inc.
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 447mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 116pF @ 10V
FET Feature -
Power Dissipation (Max) 360mW (Ta), 5.68W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DFN1010D-3
Package / Case 3-XDFN Exposed Pad
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