Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2312BDS-T1-E3

SI2312BDS-T1-E3

SI2312BDS-T1-E3

Part NumberSI2312BDS-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 3.9A SOT23-3

DatasheetSi2312BDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2312BDS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2312BDS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2312BDS-T1-E3.
We are offering SI2312BDS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2312BDS-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si2312BDS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	31mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 4.5V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	750mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2312BDS-T1-E3 - Related Products

	TK30A06N1,S4X	Toshiba Semiconductor and Storage, N-Channel 60V 30A (Tc) 25W (Tc) Through Hole TO-220SIS, U-MOSVIII-H	View
	FDD6630A	ON Semiconductor, N-Channel 30V 21A (Ta) 28W (Ta) Surface Mount TO-252, PowerTrench®	View
	PHB191NQ06LT,118	Nexperia USA Inc., N-Channel 55V 75A (Tc) 300W (Tc) Surface Mount D2PAK, TrenchMOS™	View
	SI4420DYTRPBF	Infineon Technologies, N-Channel 30V 12.5A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	BUK9209-40B,118	Nexperia USA Inc., N-Channel 40V 75A (Tc) 167W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	BUK762R6-40E,118	Nexperia USA Inc., N-Channel 40V 100A (Tc) 263W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	CSD13383F4	Texas Instruments, N-Channel 12V 2.9A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™	View
	IPA032N06N3GXKSA1	Infineon Technologies, N-Channel 60V 84A (Tc) 41W (Tc) Through Hole PG-TO220-3-31 Full Pack, OptiMOS™	View
	AON6144	Alpha & Omega Semiconductor Inc., N-Channel 40V 100A (Tc) 78W (Tc) Surface Mount 8-DFN (5x6),	View
	RTL035N03FRATR	Rohm Semiconductor, N-Channel 30V 3.5A (Ta) 1W (Ta) Surface Mount TUMT6, Automotive, AEC-Q101	View
	STL150N3LLH6	STMicroelectronics, N-Channel 30V 150A (Tc) 80W (Tc) Surface Mount PowerFlat™ (5x6), DeepGATE™, STripFET™ VI	View
	STQ1NK60ZR-AP	STMicroelectronics, N-Channel 600V 300mA (Tc) 3W (Tc) Through Hole TO-92-3, SuperMESH™	View

SI2312BDS-T1-E3 - Tags

SI2312BDS-T1-E3 SI2312BDS-T1-E3 PDF SI2312BDS-T1-E3 datasheet SI2312BDS-T1-E3 specification SI2312BDS-T1-E3 image SI2312BDS-T1-E3 India Renesas Electronics India SI2312BDS-T1-E3 buy SI2312BDS-T1-E3 SI2312BDS-T1-E3 price SI2312BDS-T1-E3 distributor SI2312BDS-T1-E3 supplier SI2312BDS-T1-E3 wholesales