SI2309CDS-T1-GE3

Part NumberSI2309CDS-T1-GE3

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2309CDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	345mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.1nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	210pF @ 30V
FET Feature	-
Power Dissipation (Max)	1W (Ta), 1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

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