Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2309CDS-T1-GE3

SI2309CDS-T1-GE3

SI2309CDS-T1-GE3

Part NumberSI2309CDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 60V 1.6A SOT23-3

DatasheetSI2309CDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2309CDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2309CDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2309CDS-T1-GE3.
We are offering SI2309CDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2309CDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2309CDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	345mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.1nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	210pF @ 30V
FET Feature	-
Power Dissipation (Max)	1W (Ta), 1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2309CDS-T1-GE3 - Related Products

	DMP2240UW-7	Diodes Incorporated, P-Channel 20V 1.5A (Ta) 250mW (Ta) Surface Mount SOT-323,	View
	SI7625DN-T1-GE3	Vishay Siliconix, P-Channel 30V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	SIA441DJ-T1-GE3	Vishay Siliconix, P-Channel 40V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®	View
	NTHD4P02FT1G	ON Semiconductor, P-Channel 20V 2.2A (Tj) 1.1W (Tj) Surface Mount ChipFET™,	View
	SI2301CDS-T1-E3	Vishay Siliconix, P-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	STD28P3LLH6AG	STMicroelectronics, P-Channel 30V 12A (Tc) 33W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, STripFET™ H6	View
	SQM120P04-04L_GE3	Vishay Siliconix, P-Channel 40V 120A (Tc) 375W (Tc) Surface Mount, Automotive, AEC-Q101, TrenchFET®	View
	NTF5P03T3G	ON Semiconductor, P-Channel 30V 3.7A (Ta) 1.56W (Ta) Surface Mount SOT-223,	View
	FDC638P	ON Semiconductor, P-Channel 20V 4.5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View
	VP2106N3-G	Microchip Technology, P-Channel 60V 250mA (Tj) 1W (Tc) Through Hole TO-92-3,	View
	RRL025P03TR	Rohm Semiconductor, P-Channel 30V 2.5A (Ta) 320mW (Ta) Surface Mount TUMT6,	View
	MIC94050YM4-TR	Microchip Technology, P-Channel 6V 1.8A (Ta) 568mW (Ta) Surface Mount SOT-143, SymFET™	View

SI2309CDS-T1-GE3 - Tags

SI2309CDS-T1-GE3 SI2309CDS-T1-GE3 PDF SI2309CDS-T1-GE3 datasheet SI2309CDS-T1-GE3 specification SI2309CDS-T1-GE3 image SI2309CDS-T1-GE3 India Renesas Electronics India SI2309CDS-T1-GE3 buy SI2309CDS-T1-GE3 SI2309CDS-T1-GE3 price SI2309CDS-T1-GE3 distributor SI2309CDS-T1-GE3 supplier SI2309CDS-T1-GE3 wholesales