FDS6576
FDS6576
Part Number FDS6576
Description MOSFET P-CH 20V 11A 8SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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Lead Time To be Confirmed
Detailed Description P-Channel 20V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
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FDS6576 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDS6576
Standard Package 2500
Manufacturer ON Semiconductor
Series PowerTrench®
Packaging Tape & Reel (TR)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 14mOhm @ 11A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60nC @ 4.5V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 4044pF @ 10V
FET Feature -
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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Infineon Technologies, P-Channel 20V 5.6A (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6), HEXFET®
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Diodes Incorporated, P-Channel 20V 330mA (Ta) 360mW (Ta) Surface Mount X2-DFN0806-3,
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ON Semiconductor, P-Channel 8V 1.4A (Ta) 290mW (Ta) Surface Mount SC-70-3 (SOT323),
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BSS84
ON Semiconductor, P-Channel 50V 130mA (Ta) 360mW (Ta) Surface Mount SOT-23-3,
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FDS6576 - Tags