Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ RQ3E075ATTB

RQ3E075ATTB

RQ3E075ATTB

Part NumberRQ3E075ATTB

ManufacturerRohm Semiconductor

DescriptionMOSFET P-CHANNEL 30V 18A 8HSMT

DatasheetRQ3E075AT

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 18A (Tc) 15W (Tc) Surface Mount 8-HSMT (3.2x3)

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RQ3E075ATTB - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	RQ3E075AT
Standard Package	1
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	23mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	10.4nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	930pF @ 15V
FET Feature	-
Power Dissipation (Max)	15W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-HSMT (3.2x3)
Package / Case	8-PowerVDFN

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