Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2301ES-T1_GE3

SQ2301ES-T1_GE3

SQ2301ES-T1_GE3

Part NumberSQ2301ES-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 3.9A TO236

DatasheetSQ2301ES

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 3.9A (Tc) 3W (Tc) Surface Mount TO-236 (SOT-23)

To learn about the specification of SQ2301ES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2301ES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2301ES-T1_GE3.
We are offering SQ2301ES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2301ES-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2301ES
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	120mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	425pF @ 10V
FET Feature	-
Power Dissipation (Max)	3W (Tc)
Operating Temperature	-55°C ~ 175°C (TA)
Mounting Type	Surface Mount
Supplier Device Package	TO-236 (SOT-23)
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2301ES-T1_GE3 - Related Products

	AON7401	Alpha & Omega Semiconductor Inc., P-Channel 30V 12A (Ta), 35A (Tc) 3.1W (Ta), 29W (Tc) Surface Mount 8-DFN (3x3),	View
	SI3443CDV-T1-E3	Vishay Siliconix, P-Channel 20V 5.97A (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	CMLDM8120G TR	Central Semiconductor Corp, P-Channel 20V 860mA (Ta) 350mW (Ta) Surface Mount SOT-563,	View
	SIA459EDJ-T1-GE3	Vishay Siliconix, P-Channel 20V 9A (Tc) 2.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®	View
	SI4143DY-T1-GE3	Vishay Siliconix, P-Channel 30V 25.3A (Tc) 6W (Tc) Surface Mount 8-SO, TrenchFET®	View
	IRF6215STRRPBF	Infineon Technologies, P-Channel 150V 13A (Tc) 3.8W (Ta), 110W (Tc) Surface Mount D2PAK, HEXFET®	View
	ZXMP4A16KTC	Diodes Incorporated, P-Channel 40V 6.6A (Ta) 2.15W (Ta) Surface Mount TO-252-3,	View
	TP0610K-T1-E3	Vishay Siliconix, P-Channel 60V 185mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	DMP3056L-7	Diodes Incorporated, P-Channel 30V 4.3A (Ta) 1.38W (Ta) Surface Mount SOT-23,	View
	DMP21D0UT-7	Diodes Incorporated, P-Channel 20V 590mA (Ta) 240mW (Ta) Surface Mount SOT-523,	View
	IRFU9310PBF	Vishay Siliconix, P-Channel 400V 1.8A (Tc) 50W (Tc) Through Hole TO-251AA,	View
	SPP08P06PHXKSA1	Infineon Technologies, P-Channel 60V 8.8A (Tc) 42W (Tc) Through Hole PG-TO220-3, SIPMOS®	View

SQ2301ES-T1_GE3 - Tags

SQ2301ES-T1_GE3 SQ2301ES-T1_GE3 PDF SQ2301ES-T1_GE3 datasheet SQ2301ES-T1_GE3 specification SQ2301ES-T1_GE3 image SQ2301ES-T1_GE3 India Renesas Electronics India SQ2301ES-T1_GE3 buy SQ2301ES-T1_GE3 SQ2301ES-T1_GE3 price SQ2301ES-T1_GE3 distributor SQ2301ES-T1_GE3 supplier SQ2301ES-T1_GE3 wholesales