Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2301ES-T1_GE3

SQ2301ES-T1_GE3

SQ2301ES-T1_GE3

Part NumberSQ2301ES-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 3.9A TO236

DatasheetSQ2301ES

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 3.9A (Tc) 3W (Tc) Surface Mount TO-236 (SOT-23)

To learn about the specification of SQ2301ES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2301ES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2301ES-T1_GE3.
We are offering SQ2301ES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2301ES-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2301ES
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	120mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	425pF @ 10V
FET Feature	-
Power Dissipation (Max)	3W (Tc)
Operating Temperature	-55°C ~ 175°C (TA)
Mounting Type	Surface Mount
Supplier Device Package	TO-236 (SOT-23)
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2301ES-T1_GE3 - Related Products

	NTR3A052PZT1G	ON Semiconductor, P-Channel 20V 3.6A (Ta) 860mW (Ta) Surface Mount SOT-23 (TO-236AB),	View
	IRLML5203TRPBF	Infineon Technologies, P-Channel 30V 3A (Ta) 1.25W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View
	AONS21321	Alpha & Omega Semiconductor Inc., P-Channel 30V 14A (Ta), 24A (Tc) 5W (Ta), 24.5W (Tc) Surface Mount 8-DFN-EP (5x6),	View
	BSS84PH6433XTMA1	Infineon Technologies, P-Channel 60V 170mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, SIPMOS®	View
	ZXMP6A13FQTA	Diodes Incorporated, P-Channel 60V 900mA (Ta) 625mW (Ta) Surface Mount SOT-23,	View
	TP2104K1-G	Microchip Technology, P-Channel 40V 160mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23),	View
	FQB7P20TM	ON Semiconductor, P-Channel 200V 7.3A (Tc) 3.13W (Ta), 90W (Tc) Surface Mount D²PAK (TO-263AB), QFET®	View
	SI4425DDY-T1-GE3	Vishay Siliconix, P-Channel 30V 19.7A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO, TrenchFET®	View
	PMCM4401VPEZ	Nexperia USA Inc., P-Channel 12V 3.9A (Ta) 400mW (Ta), 12.5W (Tc) Surface Mount 4-WLCSP (2x2),	View
	SI9435BDY-T1-GE3	Vishay Siliconix, P-Channel 30V 4.1A (Ta) 1.3W (Ta) Surface Mount 8-SO, TrenchFET®	View
	RQ1A070ZPTR	Rohm Semiconductor, P-Channel 12V 7A (Ta) 700mW (Ta) Surface Mount TSMT8,	View
	AONR21307	Alpha & Omega Semiconductor Inc., P-Channel 30V 24A (Tc) 5W (Ta), 28W (Tc) Surface Mount 8-DFN-EP (3x3),	View

SQ2301ES-T1_GE3 - Tags

SQ2301ES-T1_GE3 SQ2301ES-T1_GE3 PDF SQ2301ES-T1_GE3 datasheet SQ2301ES-T1_GE3 specification SQ2301ES-T1_GE3 image SQ2301ES-T1_GE3 India Renesas Electronics India SQ2301ES-T1_GE3 buy SQ2301ES-T1_GE3 SQ2301ES-T1_GE3 price SQ2301ES-T1_GE3 distributor SQ2301ES-T1_GE3 supplier SQ2301ES-T1_GE3 wholesales