SQ2351ES-T1_GE3
SQ2351ES-T1_GE3
Part Number SQ2351ES-T1_GE3
Description MOSFET P-CHAN 20V SOT23
Package / Case TO-236-3, SC-59, SOT-23-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 20V 3.2A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)
To learn about the specification of SQ2351ES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2351ES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2351ES-T1_GE3.
We are offering SQ2351ES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SQ2351ES-T1_GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQ2351ES
Standard Package 1
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 115mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 4.5V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 10V
FET Feature -
Power Dissipation (Max) 2W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
SQ2351ES-T1_GE3 - Related ProductsMore >>
SSM3J338R,LF
Toshiba Semiconductor and Storage, P-Channel 12V 6A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVII
View
SI3443DV
ON Semiconductor, P-Channel 20V 4A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®
View
SI2301CDS-T1-E3
Vishay Siliconix, P-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
ZXMP4A57E6TA
Diodes Incorporated, P-Channel 40V 2.9A (Ta) 1.1W (Ta) Surface Mount SOT-26,
View
IRF5803TRPBF
Infineon Technologies, P-Channel 40V 3.4A (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6), HEXFET®
View
SISS71DN-T1-GE3
Vishay Siliconix, P-Channel 100V 23A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), ThunderFET®
View
SI9407BDY-T1-E3
Vishay Siliconix, P-Channel 60V 4.7A (Tc) 5W (Tc) Surface Mount 8-SO, TrenchFET®
View
SI3493DDV-T1-GE3
Vishay Siliconix, P-Channel 20V 8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP, TrenchFET®
View
IRF5305PBF
Infineon Technologies, P-Channel 55V 31A (Tc) 110W (Tc) Through Hole TO-220AB, HEXFET®
View
TSM301K12CQ RFG
Taiwan Semiconductor Corporation, P-Channel 20V 4.5A (Ta) 6.5W (Tc) Surface Mount 6-TDFN (2x2),
View
SQD50P03-07_GE3
Vishay Siliconix, P-Channel 30V 50A (Tc) 136W (Tc) Surface Mount TO-252AA,
View
DMP1081UCB4-7
Diodes Incorporated, P-Channel 12V 3A (Ta), 3.3A (Ta) 820mW (Ta) Surface Mount U-WLB1010-4,
View
SQ2351ES-T1_GE3 - Tags