SCT10N120
SCT10N120
Part Number SCT10N120 Description MOSFET N-CH 1.2KV TO247-3 Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 1200V 12A (Tc) 150W (Tc) Through Hole HiP247™
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SCT10N120 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SCT10N120 Standard Package 30 Manufacturer STMicroelectronics Series - Packaging Tube Part Status Active FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 690mOhm @ 6A, 20V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 20V Vgs (Max) +25V, -10V Input Capacitance (Ciss) (Max) @ Vds 290pF @ 400V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature -55°C ~ 200°C (TJ) Mounting Type Through Hole Supplier Device Package HiP247™ Package / Case TO-247-3
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