SCT2280KEC
SCT2280KEC
Part Number SCT2280KEC
Description MOSFET N-CH 1200V 14A TO-247
Package / Case TO-247-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 1200V 14A (Tc) 108W (Tc) Through Hole TO-247
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SCT2280KEC - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SCT2280KE
Standard Package 360
Manufacturer Rohm Semiconductor
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 364mOhm @ 4A, 18V
Vgs(th) (Max) @ Id 4V @ 1.4mA
Gate Charge (Qg) (Max) @ Vgs 36nC @ 18V
Vgs (Max) +22V, -6V
Input Capacitance (Ciss) (Max) @ Vds 667pF @ 800V
FET Feature -
Power Dissipation (Max) 108W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
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