Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	RGTH80TK65D
Standard Package	30
Manufacturer	Rohm Semiconductor
Series	-
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	31A
Current - Collector Pulsed (Icm)	160A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 40A
Power - Max	66W
Switching Energy	-
Input Type	Standard
Gate Charge	79nC
Td (on/off) @ 25°C	34ns/120ns
Test Condition	400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)	58ns
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3PFM, SC-93-3
Supplier Device Package	TO-3PFM

IHW20N65R5XKSA1	Infineon Technologies, IGBT 650V 40A 150W Through Hole PG-TO247-3, TrenchStop®	View
IXBX50N360HV	IXYS, IGBT 3600V 125A 660W Through Hole TO-247PLUS-HV, BIMOSFET™	View
STGWT40HP65FB	STMicroelectronics, IGBT Trench Field Stop 650V 80A 283W Through Hole TO-3P, HB	View
RGTH00TK65GC11	Rohm Semiconductor, IGBT Trench Field Stop 650V 35A 72W Through Hole TO-3PFM,	View
IKP40N65H5XKSA1	Infineon Technologies, IGBT 650V 74A 255W Through Hole PG-TO220-3, TrenchStop®	View
STGWT20V60DF	STMicroelectronics, IGBT Trench Field Stop 600V 40A 167W Through Hole TO-3P,	View
RGTV00TK65GVC11	Rohm Semiconductor, IGBT Trench Field Stop 650V 45A 94W Through Hole TO-3PFM,	View
RGT30NS65DGTL	Rohm Semiconductor, IGBT Trench Field Stop 650V 30A 133W Surface Mount LPDS (TO-263S),	View
RGT50TS65DGC11	Rohm Semiconductor, IGBT Trench Field Stop 650V 48A 174W Through Hole TO-247N,	View
IXYH50N120C3D1	IXYS, IGBT 1200V 90A 625W Through Hole TO-247 (IXYH), GenX3™, XPT™	View
IRG4BC20SPBF	Infineon Technologies, IGBT 600V 19A 60W Through Hole TO-220AB,	View
STGW20V60DF	STMicroelectronics, IGBT Trench Field Stop 600V 40A 167W Through Hole TO-247,	View

RGTH80TK65DGC11

Part NumberRGTH80TK65DGC11