IGT60R190D1SATMA1
IGT60R190D1SATMA1
Part Number IGT60R190D1SATMA1 Description IC GAN FET 600V 23A 8HSOF Package / Case 8-PowerSFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 12.5A (Tc) 55.5W (Tc) Surface Mount PG-HSOF-8-3
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IGT60R190D1SATMA1 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IGT60R190D1S Standard Package 2000 Manufacturer Infineon Technologies Series CoolGaN™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 12.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 1.6V @ 960µA Vgs (Max) -10V Input Capacitance (Ciss) (Max) @ Vds 157pF @ 400V FET Feature - Power Dissipation (Max) 55.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-HSOF-8-3 Package / Case 8-PowerSFN
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