IGT60R190D1SATMA1


IGT60R190D1SATMA1

Part NumberIGT60R190D1SATMA1

Manufacturer

Description

Datasheet

Package / Case8-PowerSFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IGT60R190D1SATMA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package2000
ManufacturerInfineon Technologies
SeriesCoolGaN™
PackagingTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id1.6V @ 960µA
Vgs (Max)-10V
Input Capacitance (Ciss) (Max) @ Vds157pF @ 400V
FET Feature-
Power Dissipation (Max)55.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8-3
Package / Case8-PowerSFN

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IGT60R190D1SATMA1 - Tags

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