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BSZ018NE2LSIATMA1


BSZ018NE2LSIATMA1

Part NumberBSZ018NE2LSIATMA1

Manufacturer

Description

Datasheet

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

BSZ018NE2LSIATMA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerInfineon Technologies
SeriesOptiMOS™
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C22A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2500pF @ 12V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 69W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TSDSON-8-FL
Package / Case8-PowerTDFN

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