IPC50N04S55R8ATMA1
IPC50N04S55R8ATMA1
Part Number IPC50N04S55R8ATMA1 Description MOSFET N-CHANNEL 40V 50A 8TDSON Package / Case 8-PowerTDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 40V 50A (Tc) 42W (Tc) Surface Mount PG-TDSON-8-33
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IPC50N04S55R8ATMA1 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPC50N04S5-5R8 Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7V, 10V Rds On (Max) @ Id, Vgs 5.8mOhm @ 25A, 10V Vgs(th) (Max) @ Id 3.4V @ 13µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1090pF @ 25V FET Feature - Power Dissipation (Max) 42W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TDSON-8-33 Package / Case 8-PowerTDFN
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