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MTB50P03HDLT4G

MTB50P03HDLT4G

Part NumberMTB50P03HDLT4G

ManufacturerON Semiconductor

DescriptionMOSFET P-CH 30V 50A D2PAK

DatasheetMTB50P03HDL

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 50A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount D2PAK

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MTB50P03HDLT4G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	MTB50P03HDL
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Not For New Designs
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	25mOhm @ 25A, 5V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	100nC @ 5V
Vgs (Max)	±15V
Input Capacitance (Ciss) (Max) @ Vds	4900pF @ 25V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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