Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA427ADJ-T1-GE3

SIA427ADJ-T1-GE3

SIA427ADJ-T1-GE3

Part NumberSIA427ADJ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 8V 12A 6SC-70

DatasheetSIA427ADJ

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 8V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA427ADJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA427ADJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA427ADJ-T1-GE3.
We are offering SIA427ADJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA427ADJ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIA427ADJ
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	16mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50nC @ 5V
Vgs (Max)	±5V
Input Capacitance (Ciss) (Max) @ Vds	2300pF @ 4V
FET Feature	-
Power Dissipation (Max)	19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA427ADJ-T1-GE3 - Related Products

	DMP21D0UFB4-7B	Diodes Incorporated, P-Channel 20V 770mA (Ta) 430mW (Ta) Surface Mount X2-DFN1006-3,	View
	SSM3J374R,LF	Toshiba Semiconductor and Storage, P-Channel 30V 4A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI	View
	SI8425DB-T1-E1	Vishay Siliconix, P-Channel 20V 1.1W (Ta), 2.7W (Tc) Surface Mount 4-WLCSP (1.6x1.6), TrenchFET®	View
	NTF2955T1G	ON Semiconductor, P-Channel 60V 1.7A (Ta) 1W (Ta) Surface Mount SOT-223,	View
	PMFPB8032XP,115	Nexperia USA Inc., P-Channel 20V 2.7A (Ta) 485mW (Ta), 6.25W (Tc) Surface Mount 6-HUSON-EP (2x2),	View
	TT8U2TR	Rohm Semiconductor, P-Channel 20V 2.4A (Ta) 1.25W (Ta) Surface Mount 8-TSST,	View
	SI7617DN-T1-GE3	Vishay Siliconix, P-Channel 30V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	SI7121ADN-T1-GE3	Vishay Siliconix, P-Channel 30V 12A (Ta) 3.5W (Ta), 27.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	IRF9321TRPBF	Infineon Technologies, P-Channel 30V 15A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	RU1C001ZPTL	Rohm Semiconductor, P-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount UMT3F,	View
	1HP04CH-TL-W	ON Semiconductor, P-Channel 100V 170mA (Ta) Surface Mount 3-CPH,	View
	SI2307CDS-T1-E3	Vishay Siliconix, P-Channel 30V 3.5A (Tc) 1.1W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View

SIA427ADJ-T1-GE3 - Tags

SIA427ADJ-T1-GE3 SIA427ADJ-T1-GE3 PDF SIA427ADJ-T1-GE3 datasheet SIA427ADJ-T1-GE3 specification SIA427ADJ-T1-GE3 image SIA427ADJ-T1-GE3 India Renesas Electronics India SIA427ADJ-T1-GE3 buy SIA427ADJ-T1-GE3 SIA427ADJ-T1-GE3 price SIA427ADJ-T1-GE3 distributor SIA427ADJ-T1-GE3 supplier SIA427ADJ-T1-GE3 wholesales