Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA427ADJ-T1-GE3

SIA427ADJ-T1-GE3

SIA427ADJ-T1-GE3

Part NumberSIA427ADJ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 8V 12A 6SC-70

DatasheetSIA427ADJ

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 8V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA427ADJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA427ADJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA427ADJ-T1-GE3.
We are offering SIA427ADJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA427ADJ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIA427ADJ
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	16mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50nC @ 5V
Vgs (Max)	±5V
Input Capacitance (Ciss) (Max) @ Vds	2300pF @ 4V
FET Feature	-
Power Dissipation (Max)	19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA427ADJ-T1-GE3 - Related Products

	TSM2301ACX RFG	Taiwan Semiconductor Corporation, P-Channel 20V 2.8A (Tc) 700mW (Ta) Surface Mount SOT-23,	View
	IRFR9310TRLPBF	Vishay Siliconix, P-Channel 400V 1.8A (Tc) 50W (Tc) Surface Mount D-Pak,	View
	DMP2035UFCL-7	Diodes Incorporated, P-Channel 20V 6.6A (Ta) 740mW (Ta) Surface Mount U-DFN1616-6,	View
	MCH3374-TL-E	ON Semiconductor, P-Channel 12V 3A (Ta) 1W (Ta) Surface Mount SC-70FL/MCPH3,	View
	SQP100P06-9M3L_GE3	Vishay Siliconix, P-Channel 60V 100A (Tc) 187W (Tc) Through Hole TO-220AB, Automotive, AEC-Q101, TrenchFET®	View
	SQ2303ES-T1_GE3	Vishay Siliconix, P-Channel 30V 2.5A (Tc) 1.9W (Tc) Surface Mount TO-236 (SOT-23), Automotive, AEC-Q101, TrenchFET®	View
	SI7145DP-T1-GE3	Vishay Siliconix, P-Channel 30V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	RD3H160SPTL1	Rohm Semiconductor, P-Channel 45V 16A (Ta) 20W (Tc) Surface Mount TO-252,	View
	BSP92PH6327XTSA1	Infineon Technologies, P-Channel 250V 260mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®	View
	TSM680P06CH X0G	Taiwan Semiconductor Corporation, P-Channel 60V 18A (Tc) 20W (Tc) Through Hole TO-251 (IPAK),	View
	RW1E025RPT2CR	Rohm Semiconductor, P-Channel 30V 2.5A (Ta) 700mW (Ta) Surface Mount 6-WEMT,	View
	DMP3105LVT-7	Diodes Incorporated, P-Channel 30V 3.1A (Ta) 1.15W (Ta) Surface Mount TSOT-23-6,	View

SIA427ADJ-T1-GE3 - Tags

SIA427ADJ-T1-GE3 SIA427ADJ-T1-GE3 PDF SIA427ADJ-T1-GE3 datasheet SIA427ADJ-T1-GE3 specification SIA427ADJ-T1-GE3 image SIA427ADJ-T1-GE3 India Renesas Electronics India SIA427ADJ-T1-GE3 buy SIA427ADJ-T1-GE3 SIA427ADJ-T1-GE3 price SIA427ADJ-T1-GE3 distributor SIA427ADJ-T1-GE3 supplier SIA427ADJ-T1-GE3 wholesales