Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ PMZB670UPE,315

PMZB670UPE,315

PMZB670UPE,315

Part NumberPMZB670UPE,315

ManufacturerNexperia USA Inc.

DescriptionMOSFET P-CH 20V 680MA DFN1006B-3

DatasheetPMZB670UPE

Package / Case3-XFDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 680mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3

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PMZB670UPE,315 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	PMZB670UPE
Standard Package	1
Manufacturer	Nexperia USA Inc.
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	680mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	850mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id	1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.14nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	87pF @ 10V
FET Feature	-
Power Dissipation (Max)	360mW (Ta), 2.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DFN1006B-3
Package / Case	3-XFDFN

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