Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S16U
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5V
Frequency - Transition	4GHz
Noise Figure (dB Typ @ f)	2.4dB @ 1GHz
Gain	4.5dBi
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 1V
Current - Collector (Ic) (Max)	60mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	USM

MCH4020-TL-H	ON Semiconductor, RF Transistor NPN 8V 150mA 16GHz 400mW Surface Mount 4-MCPH,	View
BFU530XRR	NXP USA Inc., RF Transistor NPN 12V 40mA 11GHz 450mW Surface Mount SOT-143R, Automotive, AEC-Q101	View
BFR340FH6327XTSA1	Infineon Technologies, RF Transistor NPN 9V 20mA 14GHz 75mW Surface Mount PG-TSFP-3,	View
BFR840L3RHESDE6327XTSA1	Infineon Technologies, RF Transistor NPN 2.6V 35mA 75GHz 75mW Surface Mount PG-TSLP-3,	View
BFR740L3RHE6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 30mA 42GHz 160mW Surface Mount PG-TSLP-3,	View
MMBTH10LT1G	ON Semiconductor, RF Transistor NPN 25V 650MHz 225mW Surface Mount SOT-23-3 (TO-236),	View
KST10MTF	ON Semiconductor, RF Transistor NPN 25V 650MHz 350mW Surface Mount SOT-23-3,	View
NSVF3007SG3T1G	ON Semiconductor, RF Transistor NPN 12V 30mA 8GHz 350mW Surface Mount 3-MCPH, Automotive, AEC-Q101	View
2SC5095-R(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 10V 15mA 10GHz 100mW Surface Mount SC-70,	View
BFP843H6327XTSA1	Infineon Technologies, RF Transistor NPN 2.25V 55mA 125mW Surface Mount SOT-343,	View
BFU520XRR	NXP USA Inc., RF Transistor NPN 12V 30mA 10.5GHz 450mW Surface Mount SOT-143R, Automotive, AEC-Q101	View
BFU760F,115	NXP USA Inc., RF Transistor NPN 2.8V 70mA 45GHz 220mW Surface Mount 4-DFP,	View

MT3S16U(TE85L,F)

Part NumberMT3S16U(TE85L,F)