Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	RF Discretes Selection Guide
Standard Package	1
Manufacturer	Infineon Technologies
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	4.5V
Frequency - Transition	42GHz
Noise Figure (dB Typ @ f)	0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Gain	11dB ~ 21.5dB
Power - Max	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce	110 @ 80mA, 3V
Current - Collector (Ic) (Max)	150mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	4-SMD, Flat Leads
Supplier Device Package	4-TSFP
Base Part Number	BFP650

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BFP650FH6327XTSA1

Part NumberBFP650FH6327XTSA1