Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	BFG35
Standard Package	1
Manufacturer	NXP USA Inc.
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	18V
Frequency - Transition	4GHz
Noise Figure (dB Typ @ f)	-
Gain	-
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 100mA, 10V
Current - Collector (Ic) (Max)	150mA
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Supplier Device Package	SOT-223
Base Part Number	BFG35

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BFG35,115

Part NumberBFG35,115