MT3S111(TE85L,F)
MT3S111(TE85L,F)
Part Number MT3S111(TE85L,F) Description RF TRANS NPN 6V 11.5GHZ SMINI Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description RF Transistor NPN 6V 100mA 11.5GHz 700mW Surface Mount S-Mini
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MT3S111(TE85L,F) - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet MT3S111 Standard Package 3000 Manufacturer Toshiba Semiconductor and Storage Series - Packaging Tape & Reel (TR) Part Status Active Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 6V Frequency - Transition 11.5GHz Noise Figure (dB Typ @ f) 1.2dB @ 1GHz Gain 12dB Power - Max 700mW DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V Current - Collector (Ic) (Max) 100mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package S-Mini
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