Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S20TU
Standard Package	3000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1.45dB @ 20mA, 5V
Gain	12dB
Power - Max	900mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 50mA, 5V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-SMD, Flat Leads
Supplier Device Package	UFM

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2SC5065-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 30mA 7GHz 100mW Surface Mount USM,	View
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BFR181E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 20mA 8GHz 175mW Surface Mount SOT-23-3,	View
BFS17PE6327HTSA1	Infineon Technologies, RF Transistor NPN 15V 25mA 1.4GHz 280mW Surface Mount SOT-23-3,	View
BFR360L3E6765XTMA1	Infineon Technologies, RF Transistor NPN 9V 35mA 14GHz 210mW Surface Mount PG-TSLP-3-1,	View
BFP650H6327XTSA1	Infineon Technologies, RF Transistor NPN 4.5V 150mA 37GHz 500mW Surface Mount PG-SOT343-4,	View
BFP183WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 65mA 8.5GHz 450mW Surface Mount PG-SOT343-4,	View

MT3S20TU(TE85L)

Part NumberMT3S20TU(TE85L)