Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2SC5095
Standard Package	3000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	10V
Frequency - Transition	10GHz
Noise Figure (dB Typ @ f)	1.8dB @ 2GHz
Gain	13dB ~ 7dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 7mA, 6V
Current - Collector (Ic) (Max)	15mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	SC-70

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MMBTH10-4LT1G	ON Semiconductor, RF Transistor NPN 25V 800MHz 225mW Surface Mount SOT-23-3 (TO-236),	View
BFR380L3E6327XTMA1	Infineon Technologies, RF Transistor NPN 9V 80mA 14GHz 380mW Surface Mount PG-TSLP-3-1,	View
BFU760F,115	NXP USA Inc., RF Transistor NPN 2.8V 70mA 45GHz 220mW Surface Mount 4-DFP,	View
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BFR183E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 65mA 8GHz 450mW Surface Mount SOT-23-3,	View
2SC5087YTE85LF	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 150mW Surface Mount SMQ,	View
2SC5226A-4-TL-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 150mW Surface Mount 3-MCP,	View
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2SC5095-O(TE85L,F)

Part Number2SC5095-O(TE85L,F)