Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S111
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	6V
Frequency - Transition	11.5GHz
Noise Figure (dB Typ @ f)	1.2dB @ 1GHz
Gain	12dB
Power - Max	700mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini

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2SC5227A-4-TB-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 200mW Surface Mount 3-CP,	View
MCH4015-TL-H	ON Semiconductor, RF Transistor NPN 12V 100mA 10GHz 450mW Surface Mount 4-MCPH,	View
BFU530XRR	NXP USA Inc., RF Transistor NPN 12V 40mA 11GHz 450mW Surface Mount SOT-143R, Automotive, AEC-Q101	View
BFP840ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 2.25V 35mA 80GHz 75mW Surface Mount SOT-343,	View
BFU630F,115	NXP USA Inc., RF Transistor NPN 5.5V 30mA 21GHz 200mW Surface Mount 4-DFP,	View
BFP640H6327XTSA1	Infineon Technologies, RF Transistor NPN 4.5V 50mA 40GHz 200mW Surface Mount PG-SOT343-4,	View
2N2857	Central Semiconductor Corp, RF Transistor NPN 15V 40mA 1.9GHz 200mW Through Hole TO-72,	View
BFQ19SH6327XTSA1	Infineon Technologies, RF Transistor NPN 15V 120mA 5.5GHz 1W Surface Mount SOT-89-3,	View
MCH4020-TL-H	ON Semiconductor, RF Transistor NPN 8V 150mA 16GHz 400mW Surface Mount 4-MCPH,	View
BFU530WX	NXP USA Inc., RF Transistor NPN 12V 40mA 11GHz 450mW Surface Mount SOT-323-3, Automotive, AEC-Q101	View

MT3S111(TE85L,F)

Part NumberMT3S111(TE85L,F)