Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	BFP193
Standard Package	3000
Manufacturer	Infineon Technologies
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	8GHz
Noise Figure (dB Typ @ f)	1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain	12dB ~ 18dB
Power - Max	580mW
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 30mA, 8V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-253-4, TO-253AA
Supplier Device Package	PG-SOT143-4
Base Part Number	BFP193

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2SC4215-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount USM,	View
BFP183E7764HTSA1	Infineon Technologies, RF Transistor NPN 12V 65mA 8GHz 250mW Surface Mount PG-SOT143-4,	View
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2SC5095-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 10V 15mA 10GHz 100mW Surface Mount SC-70,	View
BFR360FH6327XTSA1	Infineon Technologies, RF Transistor NPN 9V 35mA 14GHz 210mW Surface Mount PG-TSFP-3,	View
15GN03CA-TB-E	ON Semiconductor, RF Transistor NPN 10V 70mA 1.5GHz 200mW Surface Mount 3-CP,	View
BFP760H6327XTSA1	Infineon Technologies, RF Transistor NPN 4V 70mA 45GHz 240mW Surface Mount SOT-343,	View

BFP193E6327HTSA1

Part NumberBFP193E6327HTSA1