IXTQ36N30P
IXTQ36N30P
Part Number IXTQ36N30P Manufacturer IXYS Description MOSFET N-CH 300V 36A TO-3P Package / Case TO-3P-3, SC-65-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 300V 36A (Tc) 300W (Tc) Through Hole TO-3P
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IXTQ36N30P - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXT(A,P,Q)36N30P Standard Package 30 Manufacturer IXYS Series PolarHT™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300V Current - Continuous Drain (Id) @ 25°C 36A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 110mOhm @ 18A, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3
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