SI4842BDY-T1-GE3
SI4842BDY-T1-GE3
Part Number SI4842BDY-T1-GE3 Description MOSFET N-CH 30V 28A 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 28A (Tc) 3W (Ta), 6.25W (Tc) Surface Mount 8-SO
To learn about the specification of SI4842BDY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4842BDY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4842BDY-T1-GE3.
We are offering SI4842BDY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI4842BDY-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI4842BDY Standard Package 2500 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 28A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3650pF @ 15V FET Feature - Power Dissipation (Max) 3W (Ta), 6.25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
SI4842BDY-T1-GE3 - Related ProductsMore >>
DMN3730U-7 Diodes Incorporated, N-Channel 30V 750mA (Ta) 450mW (Ta) Surface Mount SOT-23,
View
STL100N8F7 STMicroelectronics, N-Channel 80V 100A (Tc) 4.8W (Ta), 120W (Tc) Surface Mount PowerFlat™ (5x6), STripFET™
View
IPB080N03LGATMA1 Infineon Technologies, N-Channel 30V 50A (Tc) 47W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
SSM3K35AMFV,L3F Toshiba Semiconductor and Storage, N-Channel 20V 250mA (Ta) 500mW (Ta) Surface Mount VESM, U-MOSIII
View
IPB100N12S305ATMA1 Infineon Technologies, N-Channel 120V 100A (Tc) 300W (Tc) Surface Mount PG-TO263-3, OptiMOS™
View
CMUDM7004 TR Central Semiconductor Corp, N-Channel 30V 450mA (Ta) 250mW (Ta) Surface Mount SOT-523,
View
STF2N95K5 STMicroelectronics, N-Channel 950V 2A (Tc) 20W (Tc) Through Hole TO-220FP, SuperMESH5™
View
SQM100N10-10_GE3 Vishay Siliconix, N-Channel 100V 100A (Tc) 375W (Tc) Surface Mount TO-263 (D2Pak), Automotive, AEC-Q101, TrenchFET®
View
SIHH11N65EF-T1-GE3 Vishay Siliconix, N-Channel 650V 11A (Tc) 130W (Tc) Surface Mount PowerPAK® 8 x 8,
View
IRF3710ZSTRLPBF Infineon Technologies, N-Channel 100V 59A (Tc) 160W (Tc) Surface Mount D2PAK, HEXFET®
View
R6012FNJTL Rohm Semiconductor, N-Channel 600V 12A (Tc) 50W (Tc) Surface Mount LPTS (SC-83),
View
IPD35N12S3L24ATMA1 Infineon Technologies, N-Channel 120V 35A (Tc) 71W (Tc) Surface Mount PG-TO252-3, OptiMOS™
View
SI4842BDY-T1-GE3 - Tags
English
