IPW65R110CFDAFKSA1
IPW65R110CFDAFKSA1
Part Number IPW65R110CFDAFKSA1
Description MOSFET N-CH 650V 31.2A TO247
Package / Case TO-247-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 650V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO247-3
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IPW65R110CFDAFKSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPx65R110CFDA
Standard Package 240
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, CoolMOS™
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3240pF @ 100V
FET Feature -
Power Dissipation (Max) 277.8W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
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