TK28N65W,S1F
TK28N65W,S1F
Part Number TK28N65W,S1F Description MOSFET N-CH 650V 27.6A TO247 Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 27.6A (Ta) 230W (Tc) Through Hole TO-247
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TK28N65W,S1F - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TK28N65W Standard Package 30 Manufacturer Toshiba Semiconductor and Storage Series DTMOSIV Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 27.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 110mOhm @ 13.8A, 10V Vgs(th) (Max) @ Id 3.5V @ 1.6mA Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 300V FET Feature - Power Dissipation (Max) 230W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3
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