IRLSL4030PBF
IRLSL4030PBF
Part Number IRLSL4030PBF
Description MOSFET N-CH 100V 180A TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 100V 180A (Tc) 370W (Tc) Through Hole TO-262
To learn about the specification of IRLSL4030PBF, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IRLSL4030PBF with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IRLSL4030PBF.
We are offering IRLSL4030PBF for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IRLSL4030PBF - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRLS(L)4030PBF
Standard Package 1000
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 110A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130nC @ 4.5V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 11360pF @ 50V
FET Feature -
Power Dissipation (Max) 370W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
IRLSL4030PBF - Related ProductsMore >>
BSC046N10NS3GATMA1
Infineon Technologies, N-Channel 100V 17A (Ta), 100A (Tc) 156W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™
View
FQB34N20TM-AM002
ON Semiconductor, N-Channel 200V 31A (Tc) 3.13W (Ta), 180W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
View
IXFP26N30X3
IXYS, N-Channel 300V 26A (Tc) 170W (Tc) Through Hole TO-220AB, HiPerFET™
View
TN2640N3-G
Microchip Technology, N-Channel 400V 220mA (Tj) 740mW (Ta) Through Hole TO-92-3,
View
DMT3020LFDF-7
Diodes Incorporated, N-Channel 30V 8.4A (Ta) 700mW (Ta), 1.8W (Tc) Surface Mount U-DFN2020-6 (Type B),
View
CSD18514Q5A
Texas Instruments, N-Channel 40V 89A (Tc) 74W (Tc) Surface Mount 8-VSONP (5x6), NexFET™
View
IPB110N20N3LFATMA1
Infineon Technologies, N-Channel 200V 88A (Tc) 250W (Tc) Surface Mount PG-TO263-3, OptiMOS™ 3
View
IPD025N06NATMA1
Infineon Technologies, N-Channel 60V 90A (Tc) 3W (Ta), 167W (Tc) Surface Mount PG-TO252-3, OptiMOS™
View
SI8824EDB-T2-E1
Vishay Siliconix, N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®
View
IRLR120TRLPBF
Vishay Siliconix, N-Channel 100V 7.7A (Tc) 42W (Tc) Surface Mount,
View
IPC100N04S5L1R5ATMA1
Infineon Technologies, N-Channel 40V 100A (Tc) 115W (Tc) Surface Mount PG-TDSON-8-34, OptiMOS™
View
TN5335N8-G
Microchip Technology, N-Channel 350V 230mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),
View
IRLSL4030PBF - Tags