IPB110N20N3LFATMA1

Part NumberIPB110N20N3LFATMA1

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPB110N20N3LF
Standard Package	1
Manufacturer	Infineon Technologies
Series	OptiMOS™ 3
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	11mOhm @ 88A, 10V
Vgs(th) (Max) @ Id	4.2V @ 260µA
Gate Charge (Qg) (Max) @ Vgs	76nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	650pF @ 100V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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