IPB110N20N3LFATMA1


IPB110N20N3LFATMA1

Part NumberIPB110N20N3LFATMA1

Manufacturer

Description

Datasheet

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IPB110N20N3LFATMA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerInfineon Technologies
SeriesOptiMOS™ 3
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11mOhm @ 88A, 10V
Vgs(th) (Max) @ Id4.2V @ 260µA
Gate Charge (Qg) (Max) @ Vgs76nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds650pF @ 100V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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IPB110N20N3LFATMA1 - Tags

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