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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRLR(U)120,%20SiHLR(U)120
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Max) @ Id, Vgs 270mOhm @ 4.6A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
TSM35N10CP ROG
Taiwan Semiconductor Corporation, N-Channel 100V 32A (Tc) 83.3W (Tc) Surface Mount TO-252, (D-Pak),
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NVMFS6H824NT1G
ON Semiconductor, N-Channel 80V 19A (Ta), 103A (Tc) 3.8W (Ta), 115W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL), Automotive, AEC-Q101
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STP150NF04
STMicroelectronics, N-Channel 40V 80A (Tc) 300W (Tc) Through Hole TO-220AB, STripFET™ II
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RSD200N05TL
Rohm Semiconductor, N-Channel 45V 20A (Ta) 20W (Tc) Surface Mount CPT3,
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PSMN7R0-30MLC,115
Nexperia USA Inc., N-Channel 30V 67A (Tc) 57W (Tc) Surface Mount LFPAK33,
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BSH114,215
Nexperia USA Inc., N-Channel 100V 500mA (Ta) 360mW (Ta), 830mW (Tc) Surface Mount TO-236AB, TrenchMOS™
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IRFHS8342TRPBF
Infineon Technologies, N-Channel 30V 8.8A (Ta), 19A (Tc) 2.1W (Ta) Surface Mount PG-TSDSON-6, HEXFET®
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STF10N80K5
STMicroelectronics, N-Channel 800V 9A (Tc) 30W (Tc) Through Hole TO-220FP, MDmesh™
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BSC098N10NS5ATMA1
Infineon Technologies, N-Channel 100V 60A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™
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IPB065N15N3GATMA1
Infineon Technologies, N-Channel 150V 130A (Tc) 300W (Tc) Surface Mount PG-TO263-7, OptiMOS™
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RCX051N25
Rohm Semiconductor, N-Channel 250V 5A (Tc) 2.23W (Ta), 30W (Tc) Through Hole TO-220FM,
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IRLI2910PBF
Infineon Technologies, N-Channel 100V 31A (Tc) 63W (Tc) Through Hole TO-220AB Full-Pak, HEXFET®
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