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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRLR(U)120,%20SiHLR(U)120
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Max) @ Id, Vgs 270mOhm @ 4.6A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SIHH14N65E-T1-GE3
Vishay Siliconix, N-Channel 650V 15A (Tc) 156W (Tc) Surface Mount PowerPAK® 8 x 8,
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SQD50N06-09L_GE3
Vishay Siliconix, N-Channel 60V 50A (Tc) 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
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STP110N8F6
STMicroelectronics, N-Channel 80V 110A (Tc) 200W (Tc) Through Hole TO-220, STripFET™ F6
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IPP052N06L3GXKSA1
Infineon Technologies, N-Channel 60V 80A (Tc) 115W (Tc) Through Hole PG-TO220-3, OptiMOS™
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APT36N90BC3G
Microsemi Corporation, N-Channel 900V 36A (Tc) 390W (Tc) Through Hole TO-247 [B], CoolMOS™
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NVR5198NLT3G
ON Semiconductor, N-Channel 60V 1.7A (Ta) 900mW (Ta) Surface Mount SOT-23-3 (TO-236),
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IRFB3207ZPBF
Infineon Technologies, N-Channel 75V 120A (Tc) 300W (Tc) Through Hole TO-220AB, HEXFET®
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STD18NF25
STMicroelectronics, N-Channel 250V 17A (Tc) 110W (Tc) Surface Mount DPAK, STripFET™ II
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SIHG16N50C-E3
Vishay Siliconix, N-Channel 500V 16A (Tc) 250W (Tc) Through Hole TO-247AC,
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FDD13AN06A0-F085
ON Semiconductor, N-Channel 60V 9.9A (Ta), 50A (Tc) 115W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, PowerTrench®
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TSM2N60SCW RPG
Taiwan Semiconductor Corporation, N-Channel 600V 600mA (Tc) 2.5W (Tc) Surface Mount SOT-223,
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BSZ100N06NSATMA1
Infineon Technologies, N-Channel 60V 40A (Tc) 2.1W (Ta), 36W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™
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