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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRLR(U)120,%20SiHLR(U)120
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Max) @ Id, Vgs 270mOhm @ 4.6A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
CSD17310Q5A
Texas Instruments, N-Channel 30V 21A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6), NexFET™
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CSD19538Q3AT
Texas Instruments, N-Channel 100V 15A (Ta) 2.8W (Ta), 23W (Tc) Surface Mount 8-VSONP (3x3.15), NexFET™
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IXFH150N30X3
IXYS, N-Channel 300V 150A (Tc) 890W (Tc) Through Hole TO-247, HiPerFET™
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FDMS86350
ON Semiconductor, N-Channel 80V 25A (Ta), 130A (Tc) 2.7W (Ta), 156W (Tc) Surface Mount Power56, PowerTrench®
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STP34NM60ND
STMicroelectronics, N-Channel 600V 29A (Tc) 190W (Tc) Through Hole TO-220, FDmesh™ II
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DMN13H750S-7
Diodes Incorporated, N-Channel 130V 1A (Ta) 770mW (Ta) Surface Mount SOT-23,
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CPC3980ZTR
IXYS Integrated Circuits Division, N-Channel 800V 1.8W (Ta) Surface Mount SOT-223,
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IRF3710ZPBF
Infineon Technologies, N-Channel 100V 59A (Tc) 160W (Tc) Through Hole TO-220AB, HEXFET®
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BSS138AKAR
Nexperia USA Inc., N-Channel 60V 200mA (Ta) 300mW (Ta), 1.06W (Tc) Surface Mount TO-236AB,
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SUM70090E-GE3
Vishay Siliconix, N-Channel 100V 50A (Tc) 125W (Tc) Surface Mount TO-263 (D2Pak), ThunderFET®
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TSM3N80CI C0G
Taiwan Semiconductor Corporation, N-Channel 800V 3A (Tc) 94W (Tc) Through Hole ITO-220AB,
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IRLP3034PBF
Infineon Technologies, N-Channel 40V 195A (Tc) 341W (Tc) Through Hole TO-247AC, HEXFET®
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