Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI8824EDB-T2-E1

SI8824EDB-T2-E1

SI8824EDB-T2-E1

Part NumberSI8824EDB-T2-E1

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 2.1A MICROFOOT

DatasheetSI8824EDB

Package / Case4-XFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot

To learn about the specification of SI8824EDB-T2-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8824EDB-T2-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8824EDB-T2-E1.
We are offering SI8824EDB-T2-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8824EDB-T2-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI8824EDB
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	75mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6nC @ 4.5V
Vgs (Max)	±5V
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 10V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-Microfoot
Package / Case	4-XFBGA

SI8824EDB-T2-E1 - Related Products

	SPU07N60C3BKMA1	Infineon Technologies, N-Channel 650V 7.3A (Tc) 83W (Tc) Through Hole PG-TO251-3, CoolMOS™	View
	FDMS9411-F085	ON Semiconductor, N-Channel 40V 30A (Tc) 68.2W (Tj) Surface Mount Power56, Automotive, AEC-Q101, PowerTrench®	View
	IXFA90N20X3	IXYS, N-Channel 200V 90A (Tc) 390W (Tc) Surface Mount TO-263AA, HiPerFET™	View
	IRFR4510TRPBF	Infineon Technologies, N-Channel 100V 56A (Tc) 143W (Tc) Surface Mount D-Pak, HEXFET®	View
	TPHR6503PL,L1Q	Toshiba Semiconductor and Storage, N-Channel 30V 150A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSIX-H	View
	IRFD420PBF	Vishay Siliconix, N-Channel 500V 370mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,	View
	SIHS90N65E-E3	Vishay Siliconix, N-Channel 650V 87A (Tc) 625W (Tc) Through Hole SUPER-247™ (TO-274AA),	View
	IRF8301MTRPBF	Infineon Technologies, N-Channel 30V 34A (Ta), 192A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT, HEXFET®	View
	SIHH120N60E-T1-GE3	Vishay Siliconix, N-Channel 600V 24A (Tc) 156W (Tc) Surface Mount PowerPAK® 8 x 8,	View
	2SK2009TE85LF	Toshiba Semiconductor and Storage, N-Channel 30V 200mA (Ta) 200mW (Ta) Surface Mount SC-59-3,	View
	FQPF10N60C	ON Semiconductor, N-Channel 600V 9.5A (Tc) 50W (Tc) Through Hole TO-220F, QFET®	View
	FDMC7664	ON Semiconductor, N-Channel 30V 18.8A (Ta), 24A (Tc) 2.3W (Ta), 45W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View

SI8824EDB-T2-E1 - Tags

SI8824EDB-T2-E1 SI8824EDB-T2-E1 PDF SI8824EDB-T2-E1 datasheet SI8824EDB-T2-E1 specification SI8824EDB-T2-E1 image SI8824EDB-T2-E1 India Renesas Electronics India SI8824EDB-T2-E1 buy SI8824EDB-T2-E1 SI8824EDB-T2-E1 price SI8824EDB-T2-E1 distributor SI8824EDB-T2-E1 supplier SI8824EDB-T2-E1 wholesales