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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet 2N7002CK
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.3nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 55pF @ 25V
FET Feature -
Power Dissipation (Max) 350mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3
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ON Semiconductor, N-Channel 20V 3.6A (Ta) 470mW (Ta) Surface Mount SOT-23-3 (TO-236),
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RS1E240GNTB
Rohm Semiconductor, N-Channel 30V 24A (Ta) 3W (Ta), 27.4W (Tc) Surface Mount 8-HSOP,
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SISS08DN-T1-GE3
Vishay Siliconix, N-Channel 25V 53.9A (Ta), 195.5A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET® Gen IV
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