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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_210
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
2N7002BKW,115
Nexperia USA Inc., N-Channel 60V 310mA (Ta) 275mW (Ta) Surface Mount SC-70, Automotive, AEC-Q101, TrenchMOS™
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IXFT32N100XHV
IXYS, N-Channel 1000V 32A (Tc) 890W (Tc) Surface Mount TO-268HV (IXFT), HiPerFET™
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SI7848BDP-T1-E3
Vishay Siliconix, N-Channel 40V 47A (Tc) 4.2W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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FDP80N06
ON Semiconductor, N-Channel 60V 80A (Tc) 176W (Tc) Through Hole TO-220-3, UniFET™
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R6024ENX
Rohm Semiconductor, N-Channel 600V 24A (Tc) 40W (Tc) Through Hole TO-220FM,
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IRFSL7437PBF
Infineon Technologies, N-Channel 40V 195A (Tc) 230W (Tc) Through Hole TO-262, HEXFET®, StrongIRFET™
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IPW60R190C6FKSA1
Infineon Technologies, N-Channel 600V 20.2A (Tc) 151W (Tc) Through Hole PG-TO247-3, CoolMOS™
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CSD19538Q3A
Texas Instruments, N-Channel 100V 15A (Ta) 2.8W (Ta), 23W (Tc) Surface Mount 8-VSONP (3x3.15), NexFET™
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FDP55N06
ON Semiconductor, N-Channel 60V 55A (Tc) 114W (Tc) Through Hole TO-220-3, UniFET™
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CSD17573Q5BT
Texas Instruments, N-Channel 30V 100A (Ta) 3.2W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™
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SI7430DP-T1-E3
Vishay Siliconix, N-Channel 150V 26A (Tc) 5.2W (Ta), 64W (Tc) Surface Mount PowerPAK® SO-8,
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IRFR430APBF
Vishay Siliconix, N-Channel 500V 5A (Tc) 110W (Tc) Surface Mount D-Pak,
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