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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_210
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
FQA70N15
ON Semiconductor, N-Channel 150V 70A (Tc) 330W (Tc) Through Hole TO-3PN, QFET®
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RCX200N20
Rohm Semiconductor, N-Channel 200V 20A (Tc) 2.23W (Ta), 40W (Tc) Through Hole TO-220FM,
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BUK9606-55A,118
Nexperia USA Inc., N-Channel 55V 75A (Tj) 300W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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SSM6K514NU,LF
Toshiba Semiconductor and Storage, N-Channel 40V 12A (Ta) 2.5W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSIX-H
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FDMA7670
ON Semiconductor, N-Channel 30V 11A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®
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IXFP36N20X3M
IXYS, N-Channel 200V 36A (Tc) 36W (Tc) Through Hole TO-220 Isolated Tab, HiPerFET™
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TSM60NB1R4CP ROG
Taiwan Semiconductor Corporation, N-Channel 600V 3A (Tc) 28.4W (Tc) Surface Mount TO-252, (D-Pak),
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SQ4050EY-T1_GE3
Vishay Siliconix, N-Channel 40V 19A (Tc) 6W (Tc) Surface Mount 8-SOIC, Automotive, AEC-Q101, TrenchFET®
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STI24NM60N
STMicroelectronics, N-Channel 600V 17A (Tc) 125W (Tc) Through Hole I2PAK, MDmesh™ II
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FQD6N50CTM
ON Semiconductor, N-Channel 500V 4.5A (Tc) 2.5W (Ta), 61W (Tc) Surface Mount D-Pak, QFET®
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STF15N60M2-EP
STMicroelectronics, N-Channel 600V 11A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ M2-EP
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RD3T075CNTL1
Rohm Semiconductor, N-Channel 200V 7.5A (Tc) 52W (Tc) Surface Mount TO-252,
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