SIS106DN-T1-GE3
SIS106DN-T1-GE3
Part Number SIS106DN-T1-GE3 Description MOSFET N-CHAN 60V POWERPAK 1212- Package / Case PowerPAK® 1212-8SUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 60V 9.8A (Ta), 16A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
To learn about the specification of SIS106DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS106DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS106DN-T1-GE3.
We are offering SIS106DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIS106DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIS106DN Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Gen IV Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 9.8A (Ta), 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V Rds On (Max) @ Id, Vgs 18.5mOhm @ 4A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 540pF @ 30V FET Feature - Power Dissipation (Max) 3.2W (Ta), 24W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8S (3.3x3.3) Package / Case PowerPAK® 1212-8S
SIS106DN-T1-GE3 - Related ProductsMore >>
STWA75N60M6 STMicroelectronics, N-Channel 600V 72A (Tc) 446W (Tc) Through Hole TO-247 Long Leads, MDmesh™ M6
View
CSD18510KTT Texas Instruments, N-Channel 40V 274A (Tc) 250W (Ta) Surface Mount DDPAK/TO-263-3, NexFET™
View
IXTN22N100L IXYS, N-Channel 1000V 22A (Tc) 700W (Tc) Chassis Mount SOT-227B,
View
TN0610N3-G Microchip Technology, N-Channel 100V 500mA (Tj) 1W (Tc) Through Hole TO-92-3,
View
TSM160N10CZ C0G Taiwan Semiconductor Corporation, N-Channel 100V 160A (Tc) 300W (Tc) Through Hole TO-220,
View
DMN2230U-7 Diodes Incorporated, N-Channel 20V 2A (Ta) 600mW (Ta) Surface Mount SOT-23-3,
View
STL7N6F7 STMicroelectronics, N-Channel 60V 7A (Tc) 2.4W (Ta) Surface Mount PowerFlat™ (2x2), STripFET™
View
IPDD60R125G7XTMA1 Infineon Technologies, N-Channel 600V 20A (Tc) 120W (Tc) Surface Mount PG-HDSOP-10-1, CoolMOS™ G7
View
IXTH130N10T IXYS, N-Channel 100V 130A (Tc) 360W (Tc) Through Hole TO-247 (IXTH), TrenchMV™
View
FDD8780 ON Semiconductor, N-Channel 25V 35A (Tc) 50W (Tc) Surface Mount TO-252AA, PowerTrench®
View
STW9NK95Z STMicroelectronics, N-Channel 950V 7A (Tc) 160W (Tc) Through Hole TO-247, SuperMESH™
View
TPW4R50ANH,L1Q Toshiba Semiconductor and Storage, N-Channel 100V 92A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance, U-MOSVIII-H
View
SIS106DN-T1-GE3 - Tags
English
