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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_214
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IPAW60R180P7SXKSA1
Infineon Technologies, N-Channel 650V 18A (Tc) 26W (Tc) Through Hole PG-TO220 Full Pack, CoolMOS™ P7
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ZXMN6A08KTC
Diodes Incorporated, N-Channel 60V 5.36A (Ta) 2.12W (Ta) Surface Mount TO-252-3,
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STT6N3LLH6
STMicroelectronics, N-Channel 30V 6A (Tc) 1.6W (Tc) Surface Mount SOT-23-6, DeepGATE™, STripFET™ VI
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IXTN60N50L2
IXYS, N-Channel 500V 53A (Tc) 735W (Tc) Chassis Mount SOT-227B, Linear L2™
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NVF3055-100T1G
ON Semiconductor, N-Channel 60V 3A (Ta) 1.3W (Ta) Surface Mount SOT-223, Automotive, AEC-Q101
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IXFN70N60Q2
IXYS, N-Channel 600V 70A (Tc) 890W (Tc) Chassis Mount SOT-227B, HiPerFET™
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NVHL040N65S3F
ON Semiconductor, N-Channel 650V 65A (Tc) 446W (Tc) Through Hole TO-247-3, Automotive, AEC-Q101, SuperFET® III, FRFET®
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TPN7R506NH,L1Q
Toshiba Semiconductor and Storage, N-Channel 60V 26A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H
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VN2106N3-G
Microchip Technology, N-Channel 60V 300mA (Tj) 1W (Tc) Through Hole TO-92-3,
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FDS2670
ON Semiconductor, N-Channel 200V 3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
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SUP90140E-GE3
Vishay Siliconix, N-Channel 200V 90A (Tc) 375W (Tc) Through Hole TO-220AB, ThunderFET®
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PSMN2R0-60ES,127
Nexperia USA Inc., N-Channel 60V 120A (Tc) 338W (Tc) Through Hole I2PAK,
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